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savantic semiconductor product specification silicon pnp power transistors 2SA1940 description with to-3p(i) package complement to type 2sc5197 applications power amplifier applications recommend for 55w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -8 a i b base current -0.8 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1940 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -120 v v cesat collector-emitter saturation voltage i c =-6 a;i b =-0.6a -2.0 v v be base-emitter voltage i c =-4a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-120v; i e =0 -5 a i ebo emitter cut-off current v eb =-5v; i c =0 -5 a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-4a ; v ce =-5v 35 f t transition frequency i c =-1a ; v ce =-5v 30 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 260 pf h fe-1 classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1940 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1940

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